VS-16CDU06HM3 www.vishay.com vishay semiconductors revision: 10-feb-15 1 document number: 95815 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 x 8 a fred pt ? features ? ultrafast recovery time, reduced q rr , and soft recovery ? 175 c maximum operating junction temperature ? for pfc crm, snubber operation ? low forward voltage drop ? low leakage current ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified, meets jesd 201 class 2 whisker test ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications state of the art ultrafast recovery rectifiers specifically designed with optimized perf ormance of forward voltage drop, ultrafast recovery time, and soft recovery. the planar structure and the plat inum doped life time control guarantee the best overall pe rformance, ruggedness, and reliability characteristics. these devices are intended for use in pfc, boost, in the ac/dc section of smps, freewheeling and clamp diodes. their extremely optimized stored charge and low recovery current minimize the switchin g losses and reduce power dissipation in the switch ing element and snubbers. ? product summary package to-263ac (smpd) i f(av) 2 x 8 a v r 600 v v f at i f 0.94 v t rr 45 ns t j max. 175 c diode variation dual die top view bottom view to-263ac (smpd) k 1 2 k cathode anode 2 anode 1 absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current per device i f(av) t solder pad = 149 c 16 a per diode 8 non-repetitive peak surge current per device i fsm t j = 25 c, 6 ms square pulse 200 per diode 105 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 600 - - v forward voltage, per diode v f i f = 8 a - 1.1 1.4 i f = 8 a, t j = 150 c - 0.94 1.15 reverse leakage current, per diode i r v r = v r rated - - 5 a t j = 150 c, v r = v r rated - 20 150 junction capacita nce, per diode c t v r = 600 v - 8 - pf
VS-16CDU06HM3 www.vishay.com vishay semiconductors revision: 10-feb-15 2 document number: 95815 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 45 - ns i f = 0.5 a, i r = 1 a, i rr = 0.25 a - - 60 t j = 25 c i f = 8 a, ? di f /dt = 500 a/s, ? v r = 400 v -70- t j = 125 c - 100 - peak recovery current i rrm t j = 25 c - 12 - a t j = 125 c - 17 - reverse recovery charge q rr t j = 25 c - 430 - nc t j = 125 c - 850 - thermal - mechanical specifications parameter symbol test cond itions min. typ. max. units maximum junction and storage temperature range t j , t stg -55 - +175 c thermal resistance, per diode ? junction to solder pad r thj-sp -1.82.5c/w approximate weight 0.55 g 0.02 oz. marking device case style to-263ac (smpd) 16cdu06 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i f - instantaneous forward current (a) v f -forward voltage drop (v) t j = 125 c t j = 25 c t j = 175 c t j = 150 c 0.01 0.1 1 10 100 0 100 200 300 400 500 600 i r - reverse current (a) v r - reverse voltage (v) t j = 175 c t j = 125 c t j = 25 c t j = 150 c
VS-16CDU06HM3 www.vishay.com vishay semiconductors revision: 10-feb-15 3 document number: 95815 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 5); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 1 10 100 0 100 200 300 400 500 600 c t - junction capacitance (pf) v r - reverse voltage (v) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 z thjc - thermal impedance junction to case ( c/w) t 1 - rectangular pulse duration (s) 0.50 0.20 0.10 0.05 0.02 0.01 dc 145 150 155 160 165 170 175 180 0123456789 allowable case temperature ( c) i f(av) - average forward current (a) sq uare wave (d = 0.50) 80 % rated v r applied s ee note (1) dc 0 2 4 6 8 10 12 14 024681012 average power loss (w) i f(av) - average forward current (a) d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 dc rm s limit
VS-16CDU06HM3 www.vishay.com vishay semiconductors revision: 10-feb-15 4 document number: 95815 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt fig. 9 - reverse recovery waveform and definitions 20 40 60 80 100 120 140 160 180 100 1000 t rr (ns) di f /dt (a/s) 125 c 25 c 0 200 400 600 800 1000 100 1000 q rr (nc) di f /dt (a/s) 125 c 25 c q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-16CDU06HM3 www.vishay.com vishay semiconductors revision: 10-feb-15 5 document number: 95815 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per reel minimum order quanti ty packaging description VS-16CDU06HM3/i 2000 2000 13" diamet er plastic tape and reel links to related documents dimensions www.vishay.com/doc?95604 part marking information www.vishay.com/doc?95566 packaging information www.vishay.com/doc?88869 2 - current rating (16 a) 3 - circuit configuration: 4 - d = s mpd package 5 - proce ss type, u = ultrafa s t recovery 6 - voltage code (06 = 600 v) 7 - h = aec- q 101 q ualified 8 - m3 = halogen-free, roh s -compliant, and termination s lead (pb)-free device code 5 1 3 2 4 6 7 8 v s - 16 c d u 06 h m 3 1 -vi s hay s emiconductor s product c = common cathode
outline dimensions www.vishay.com vishay semiconductors revision: 02-jun-14 1 document number: 95604 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-263ac (smpd) dimensions in inches (millimeters) 5 ( ) mounting pad layout 0 , 1 0 , 1 5 ( ) to-263ac (smpd) 1 2 0 1 2 0 w r w r 5 ( )
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